Growth of silicon carbide multilayers with varying preferred growth orientation

SiC multilayer coatings were deposited via thermal chemical vapor deposition (CVD) using silicon tetrachloride (SiCl 4 ) and various hydrocarbons under identical growth conditions, i.e. at 1100 °C 10 kPa. The consisted of layers whose preferred orientation alternated between random highly 〈111〉-oriented. randomly oriented prepared with either methane (CH or ethylene (C 2 H as carbon precursor, whereas the 〈111〉-oriented grown utilizing toluene 7 8 precursor. In this work, we demonstrated how to fabricate different orientations by merely switching hydrocarbons. Moreover, success in depositing on both flat structured graphite substrates has strengthened assumption proposed our previous study that C was primarily driven surface reactions. • one single Alternating interlayers sharp interfaces Chemically controlled precursor